savantic semiconductor product specification silicon npn power transistors 2SC3336 d escription with to-3p(i) package high voltage,high speed applications for high voltage ; high speed and high power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 500 v v ceo collector- emitter voltage open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current 15 a i cm collector current-peak 25 a i b base current 7.5 a p t total power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(i)) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3336 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ,r be = 9 ;l=100mh 400 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v cesat collector-emitter saturation voltage i c =7.5a; i b =1.5a 1.0 v v be sat base-emitter saturation voltage i c =7.5a; i b =1.5a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 50 a i ceo collector cut-off current v ce =350v; r be = 9 50 a h fe-1 dc current gain i c =7.5a ; v ce =5v 12 h fe-2 dc current gain i c =15a ; v ce =5v 5 switching times t on turn-on time 0.5 s t stg storage time 1.5 s t f fall time i c =15a ; v cc =150v i b =-i b =3.0a 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3336 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3336
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